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Wide Bandgap Semiconductor Technology High Power Electronics (WBST-HPE)

Published on AidPage by IDILOGIC on Jun 24, 2005
Administered by:

Department of Defense, Defense Advanced Research Projects Agency, Contracts Management Office
(see all US Federal Agencies)

Explore all postings for this grant program:
  • Original Grant - Jun 8, 2004
Applications Due:

Sep 1, 2004

total funding: Not Available
max award: none
min award: none
cost sharing, matching: No
number of awards: Not Available
type of funding: Cooperative Agreement, Grant, Other, Procurement Contract
Description:

The Department of Defense is moving towards platforms and weapons systems exploiting electrical power in new ways. To reach the envisioned capabilities in electric propulsion and weapons in a tactical configuration, advances are deemed necessary in the solid state power electronics used to distribute, condition, and regulate the electrical power.

In support of these thrusts, under phase II and III of the Wide Bandgap Semiconductor Technology High Power Electronics (WBST-HPE) program DARPA is interested in receiving innovative research proposals that drive high power electronics component performance to levels deemed enabling for DoD applications. The development is deemed most suited to exploiting the unique material properties of silicon carbide (SiC) materials to demonstrate revolutionary power electronics performance. The research area of interest is focused on high voltage (greater than or equal to 10 kV) components where the benefit of SiC technology is most evident. Furthermore, high switching frequency is essential to enable the reduction in the size and weight of the passive components in the power conversion circuit. In addition, low on-state resistance and forward voltage drop are critical to minimize on-state losses in the power converter. Finally, an elevated junction temperature operating capability up to at least 200 degrees C is deemed important to further reduce the size of the cooling sub-system.

DARPA is particularly interested in developing the power electronics device technology deemed necessary to enable solid state power substations (SSPS) for future Navy warships. Current distribution approaches being considered for the next generation of carriers and destroyers employ a 13.8 kV AC power distribution that is stepped down to 450 V AC by using large (6 ton and 10 cubic meters) 2.7 MVA transformers. The advanced power electronic components of interest under this effort should enable the realization of a solid state power substation (SSPS) that converts the distributed 13.8 kV AC power down to 450 V AC at the same total power level (2.7 MVA) as the current system. This solicitation seeks to develop the semiconductor components for such an SSPS. Future solicitations are envisioned to support work to develop high frequency transformers, control electronics, and complete SSPS integration.

The goal of this solicitation is to support the research and development necessary to realize the semiconductor components, switches and diodes, required to demonstrate the viability of the SSPS concept.

This solicitation seeks to exploit recent advances in SiC substrates and epitaxy quality demonstrated under Phase I of DARPA?s Wide Bandgap Semiconductor Technology High Power Electronics Program (WBST HPE: BAA01-035). Under the WBST HPE phase I program, critical SiC material metrics were demonstrated that are deemed necessary to enable large area (i. e. 1 square centimeter), high total power device work. These metrics included: 4H n-type SiC 75 mm wafers with a micropipe density less than 1 inverse square centimeter, catastrophic defect density after 100 micron epitaxy less than 1.5 inverse square centimeter, forward voltage drop in 10 kV PIN diode less than 4 V and stable over 100 hours; and on-state resistance of 10 kV SiC MOSFET less than 0.25 ohm-square centimeter. This level of material capability is deemed necessary for successful execution of the device research described under this BAA 04-28.

Small area devices consistent with the goals of this solicitation have been demonstrated in limited quantity, and offerors should clearly include their previous work in this area. However, earlier demonstrations have not been consistent with a robust device process and high total power handling capability. Therefore, this effort seeks to move beyond single device demonstrations to critical research and development of advanced components and will evaluate the feasibility of this technology in a manufacturing environment.

For the advanced power electronics technology to transition into DoD systems, or commercial applications, the reliability of the components must be established. As part of this solicitation, offerors must include a plan for assessing the component reliability consistent with the SSPS application and accepted industrial practice. Of particular interest, is identifying and eliminating any variation in component performance occurring as a function of time, temperature, current, or high voltage operation.

This solicitation addresses Phase II and III of the WBST-HPE program with each phase being
18 months in duration. If this schedule is not deemed appropriate by the offeror, an alternative program schedule that achieves the identified goals program goals in a more expeditious fashion should be proposed.

PROGRAM SCOPE

Awards totaling $30 to $50 million over three years are expected to be made in the first half of the federal fiscal year 2005. Collaborative efforts/teaming are highly encouraged. Multiple awards are anticipated. A web site (http://www.davincinetbook.com/teams) has been established to facilitate formation of teaming arrangements between interested parties. Specific content, communications, networking, and team formation are the sole responsibility of the participants. Neither DARPA nor the Department of Defense (DoD) endorses the destination web site or the information and organizations contained therein, nor does DARPA or the DoD exercise any responsibility at the destination. This web site is provided consistent with the stated purpose of this BAA. Cost sharing is not required and is not an evaluation criterion but is encouraged where there is a reasonable probability of a potential commercial application related to the proposed research and development effort. The technical POC for this effort is John C. Zolper, fax: (703) 696-2206, electronic mail: BAA04-28@darpa.mil.


GENERAL INFORMATION

Proposers must obtain a pamphlet entitled "BAA 04-28, Wide Bandgap Semiconductor Technology: High Power Electronics Proposer Information Pamphlet" which provides further information on areas of interest: devices and circuits, reactive components and assemblies, and applications; the submission, evaluation, and funding processes; proposal abstract formats, proposal formats; and other general information. This pamphlet may be obtained from the FedBizOpps website: http://www.fedbizopps.gov/, World Wide Web (WWW) at URL http://www.darpa.mil/ or by fax, electronic mail, or mail request to the administrative contact address given below. Proposals not meeting the format described in the pamphlet may not be reviewed.

In order to minimize unnecessary effort in proposal preparation and review, proposers are strongly encouraged to submit proposal abstracts in advance of full proposals. An original and nine (9) copies of the proposal abstract and two electronic copies (i.e., two separate disks) of the abstract in PDF (preferred), MS-Word readable, HTML, or ASCII format each on a CD-ROM (preferred), a single 3.5 inch High Density MS-DOS formatted 1.44 Megabyte (MB) diskette, or a single 100 MB Iomega Zip disk should be submitted. Offerors may optionally include a short viewgraph summary of their proposed effort, which is not included in the page count. This summary should not exceed two (2) slides in conventional presentation format and should be in either PowerPoint or PDF format. Each disk must be clearly labeled with BAA 04-28, proposer organization, proposal title (short title recommended) and Copy __ of 2.

The proposal abstract (original and designated number of hard and electronic copies) must be submitted to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 04-28), and must be received by DARPA on or before 4:00 p.m., local time, Tuesday, July 6, 2004. Proposal abstracts received after this time and date may not be reviewed. Upon review of the abstract, DARPA will provide written notice on the likelihood of a full proposal being considered for selection, and the time and date for submission of a full proposal. Proposers not submitting proposal abstracts must submit an original and nine (9) copies of the full proposal and two electronic copies (i.e., two separate disks) of the full proposal in PDF (preferred), MS-Word readable, HTML, or ASCII format, each on a CD-ROM (preferred), a single 3.5 inch High Density MS-DOS formatted 1.44 Megabyte (MB) diskette, or a single 100 MB Iomega Zip disk. Each disk must be clearly labeled with BAA 04-28, offering organization, proposal title (short title recommended) and Copy __ of 2. Offerors may optionally include a short viewgraph summary of their proposed effort, which is not included in the page count. This summary should not exceed four (4) slides in conventional presentation format and should be in either PowerPoint or PDF format.

The full proposal (original and designated number of hard and electronic copies) must be submitted to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 04-28), and must be received by DARPA on or before 4:00 p.m., local time, Wednesday, September 1, 2004, in order to be considered during the initial round of selections; however, proposals received after this deadline may be received and evaluated up to one year from date of posting on FedBizOpps. Full proposals submitted after the due date specified in the BAA or due date otherwise specified by DARPA after review of proposal abstracts may be selected contingent upon the availability of funds. This notice, in conjunction with the BAA 04-28 Proposer Information Pamphlet, constitutes the total BAA. No additional information is available, nor will a formal RFP or other solicitation regarding this announcement be issued. Requests for the same will be disregarded.

The Government reserves the right to select for award all, some, or none of the proposals received, and to make awards without discussions. All responsible sources capable of satisfying the Government's needs may submit a proposal which shall be considered by DARPA. Input on technical aspects of the proposals may be solicited by DARPA from non-Government consultants/experts who are bound by appropriate non-disclosure requirements. Non-Government technical consultants/experts will not have access to proposals that are labeled by their offerors as "Government Only". Historically Black Colleges and Universities (HBCUs) and Minority Institutions (MIs) are encouraged to submit proposals and join others in submitting proposals; however, no portion of this BAA will be set aside for HBCU and MI participation due to the impracticality of reserving discrete or severable areas of research in Wide Bandgap Semiconductor Technology High Power Electronics. All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to one of the administrative addresses below; e-mail or fax is preferred. DARPA intends to use electronic mail and fax for correspondence regarding BAA 04-28. Proposals and proposal abstracts may not be submitted by fax or e-mail; any so sent will be disregarded. DARPA encourages use of the WWW for retrieving the Proposer Information Pamphlet and any other related information that may subsequently be provided.

INDUSTRY DAY MEETING

The DARPA Microsystems Technology Office (DARPA/MTO) will host a one-day, unclassified briefing of the planned Wide Bandgap Semiconductor Technology: High Power Electronics Program. The Briefing to Industry will be held on June 16, 2004 from 9:00 am to 5:00 pm, at Booz Allen Hamilton, 3811 N. Fairfax Drive, Suite 600, Arlington, VA 22203. (Attendee check-in will open at 8:00 am.) Note: Attendance during one section of the briefing will be limited to U.S. citizens, because information will be presented that is subject to U.S. export control restrictions. Attendees must present evidence of U.S. citizenship to attend this portion of the meeting. Government briefing material not subject to export control regulations will be posted to the DARPA website at http://www.darpa.mil in the SOLICITATIONS area.

The program is a planned DARPA effort aiming at the development of wide bandgap semiconductors materials, devices, and integrated circuits to enable revolutionary concepts and novel approaches for high power electrical control and conversion.

This initiative will focus on the following technical areas: (a) solid state power substation topology, (b) materials extensions, (c) diodes, (d) switches, (e) switch extension, (f) module and packaging, (g) component reliability, (h) technology extensions, and (i) system impact study and cost modeling suitable for high power, high voltage applications. (For details of the planned Wide Bandgap Semiconductor Technology: High Power Electronics Program, see the notice posted on the Federal Business Opportunities (FedBizOpps) website at http://www.fedbizopps.gov/, "BAA 04-28 Wide Bandgap Semiconductor Technology: High Power Electronics.")

The purpose of this Industry Day conference is to inform the technical community of the Government plans and related activities to DARPA's Wide Bandgap Semiconductor Technology: High Power Electronics Program.

An additional purpose of this meeting is to facilitate networking between potential offerors. As such, potential offerors are encouraged to present a brief overview of their expertise and areas of interest related to this program. See the meeting registration website for details. All Industry Day presentations will be posted on the BAA Teaming Site at the following website, http://www.davincinetbook.com/teams/login.asp, following the meeting. Therefore, all presentations must be cleared for public release by the presenting organization, prior to the meeting. At the meeting, all presenters will be required to sign a waiver form stating that their presentation is cleared for public release.

Offerors wishing to attend this Briefing to Industry should register online via the following website, https://secure.davincinetbook.com/conference/default.cfm using the conference code WID46044. This website contains necessary meeting details. Citizenship verification and International Traffic in Arms Regulation (ITAR) restriction forms needed for the portion of the meeting limited to U.S. citizens are also available. These forms must be faxed to (703) 816-5444, attention Jacqueline Williams, no later than Monday, June 14, 2004. The registration fee for this meeting is $30.00. Attendees must register via the secure website by COB June 14, 2004. Checks should be payable to Booz Allen Hamilton. Due to the limited number of seats available, this conference is limited to seventy-five (75) participants. Individual organizations will be limited to no more than three (3) representatives. Any organizations having more than three (3) representatives should contact the conference coordinator directly to see if space is available. If you have any questions or need assistance, please contact Jacqueline Williams of Booz Allen Hamilton via phone at (703) 816-5268 or e-mail at williams_jacqueline@bah.com.

EVALUATION CRITERIA

Evaluation of full proposals will be accomplished through a technical review of each proposal using the following criteria, which are listed in descending order of relative importance: (1) overall scientific and technical merit, (2) potential contribution and relevance to DARPA mission, (3) plans and capability to accomplish technology transition, (4) offeror's capabilities and related experience, and (5) cost realism. Note: cost realism will only be significant in proposals which have significantly under or over-estimated the cost to complete their effort.

The administrative addresses for this BAA are:
Fax: (703) 696-2206 (Addressed to: DARPA/MTO, BAA 04-28),
Electronic Mail: BAA04-28@darpa.mil
Mail: DARPA/MTO, ATTN: BAA 04-28
3701 North Fairfax Drive
Arlington, VA 22203-1714


This announcement and the Proposer Information Pamphlet may be retrieved via the WWW, at URL http://www.darpa.mil/ in the SOLICITATIONS area.




Who can apply:

Unrestricted

Eligible functional categories:
Funding Sources:

Research and Technology Development

More Information:

Wide Bandgap Semiconductor Technology High Power Electronics (WBST-HPE)

If you have problems accessing the full announcement, please contact: Ulrey, Scott

Address Info:

Department of Defense, Defense Advanced Research Projects Agency, Contracts Management Office

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